Frontiers in Low-Frequency Noise Research in Advanced Semiconductor Devices

Abstract

The paper gives an overview of low-frequency noise studies in advanced semiconductor devices, targeting at different applications. As will be shown, the choice of substrate (bulk Si versus SOI) determines to a large extent the noise behavior of Gate-AII-Around (GAA) Vertical Nanowire (VNW) FETs. While no shot noise above 100 Hz is found for devices on SOI, the dominant flicker noise is of number fluctuations origin, in contrast to mobility fluctuations for the devices with a back-silicon source contact on bulk. It will be shown that the 1/f noise of Si-doped orthorhombic Hf02 is a factor of three lower than for paraelectric Hf02. Finally, the noise performance for GaN-on-Si based HEMTs, MOSHEMTs and MOSFETs will be compared and briefly discussed.