25.78-Gbit/s Burst Mode TIA for 50G-EPON OLT

Abstract

We report the circuit design of first 25G burst mode TIA in the world, fabricated by 0.13 μm SiGe:C BiCMOS (ft/fmax =300/500 GHz), and the evaluation results when used 25G-PIN- PD. We confirm excellent receiver sensitivities at BER=10-2 are - 20.2 dBm(OMA) for 25.78-Gbit/s and -23.2 dBm(ave) for 10.31Gbit/s, respectively. When we calculate equivalent performances when assumed 25G Ge/Si APD, these receiver sensitivities at BER=10-2 are equivalent to -29.7 dBm(OMA) for 25.78-Gbit/s and -32.3 dBm(ave) for 10.31-Gbit/s, respectively. The burst dynamic range (loud/soft ratio) to satisfy a post-FEC error condition is greater than 25 dB. We confirm excellent TIA performances that will enable a high power class OLT receiver in 50G-EPON in IEEE802.ca.