Si3N4 based non-volatile memory structures with embedded Si nanocrystals

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si₃N₄ control layer and SiO₂ or Si₃N₄ tunnel layers. It was obtained that a properly located layer of Si nanocrystals improves the charging behaviour of the MNOS structures. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of plusmn15 V, 10 ms.