A fast low-power 4/spl times/4 switch IC using InP HEMTs for 10-Gbit/s systems

H. Kamitsuna, Y. Yamane, M. Tokumitsu, H. Sugahara, M. Muraguchi
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引用次数: 4

Abstract

A 4/spl times/4 switch IC using cold-FETs connected in series can be used as a single-ended 4/spl times/4 switch, an add drop multiplexer, or a differential 2/spl times/2 switch. An InP HEMT with a low Ron/spl middot/Coff product enables us to configure a dc-to-over-10-GHz switch without using a shunt FET, which offers a logic-level-independent interface. A packaged IC achieves error-free operation up to 12.5 Gbit/s with either negative (VH = 0 V, VL = -0.9 V) or positive (VH = +13 V, VL = +0.7 V) logic-level input for all 16 possible states. The power consumption is less than 5 mW. The add drop multiplexing operation with an ultra-fast switching of /spl sim/160 ps is also successfully demonstrated.
采用InP hemt的快速低功耗4/spl times/4开关IC,适用于10gbit /s系统
使用冷场效应管串联连接的4/spl倍/4开关IC可以用作单端4/spl倍/4开关、加降多路复用器或差分2/spl倍/2开关。具有低Ron/spl中点/Coff产品的InP HEMT使我们能够配置dc到超过10 ghz的开关,而无需使用分流场效应管,从而提供逻辑电平独立的接口。封装IC可以在负(VH = 0 V, VL = -0.9 V)或正(VH = +13 V, VL = +0.7 V)逻辑电平输入的16种可能状态下实现高达12.5 Gbit/s的无错误操作。功耗小于5mw。并成功地演示了超高速开关/spl sim/160 ps的加丢复用操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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