Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 1900-01-01 DOI:10.1109/imfedk.2014.6867054

Y. Goto, A. Hiroki, A. Matsuda, M. Nakamura, J. Yoon

引用次数: 1

Abstract

This paper describes gate voltage dependence of channel length modulation for Ge p-channel MOSFETs. The gate voltage dependence of the channel length modulation is extracted from experimental current voltage characteristics. It is found that Ge p-channel MOSFETs show the gate voltage dependence of channel length modulation. To investigate the effects of the VGS dependence of λ on the current voltage characteristics, the analytical MOSFET model is compared with the experimental data. It is found that the VGS dependence of λ is essential in simulation of the current voltage characteristics for Ge p-channel MOSFETs.

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Ge p沟道mosfet通道长度调制的栅极电压依赖性

本文描述了Ge p沟道mosfet通道长度调制的栅极电压依赖性。从实验电流电压特性中提取通道长度调制的栅极电压依赖关系。研究发现，Ge p沟道mosfet具有通道长度调制的栅极电压依赖性。为了研究λ的VGS依赖性对电流电压特性的影响，将解析型MOSFET模型与实验数据进行了比较。研究发现，λ的VGS依赖性在模拟Ge p沟道mosfet的电流电压特性中是必不可少的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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