Verification of etching rule in CAES

Abstract

In this work, a relation between a removal probability in CAES and a calculated silicon etching rate was clarified. In order to verify the relation precisely, the number of removal probabilities utilized in CAES were increased from four to nine and simulation of etching rates were carried out with changing the removal probabilities. From these simulation results, the effects of removal probabilities on etching rates were clarified. Based on the obtained relation, experimentally obtained etching rates on various crystallographic planes were fitted by the CAES simulation. Although the experimental data was possible to fit mostly by CAES simulation, the accuracy of simulation was limited.