Scanning Nitrogen Vacancy Magnetometry: A Quantum Technology for Device Failure Analysis

P. Rickhaus, P. Maletinsky
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Abstract

This article describes the basic measurement physics of scanning nitrogen vacancy (NV) microscopy and the various ways it can be used in semiconductor device failure analysis. Scanning NV microscopy can measure topography as well as magnetic fields, local current density, ac noise, and local temperature variations.
扫描氮空位磁强计:一种用于器件失效分析的量子技术
本文介绍了扫描氮空位显微镜(NV)的基本测量物理原理及其在半导体器件失效分析中的应用。扫描NV显微镜可以测量地形以及磁场、局部电流密度、交流噪声和局部温度变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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