A new class of low phase noise vackar VCO in CMOS technology

Jong‐Wook Lee, M. T. Gul, T. N. Nguyen
{"title":"A new class of low phase noise vackar VCO in CMOS technology","authors":"Jong‐Wook Lee, M. T. Gul, T. N. Nguyen","doi":"10.1109/ATC.2014.7043349","DOIUrl":null,"url":null,"abstract":"In this paper, we present differential Vackar voltage-controlled oscillator (VCO) implemented for the first time in CMOS technology. The Vackar VCO provides good isolation between LC tank and loss-compensating active circuit; thus, excellent frequency stability is achieved over the frequency tuning range. Simple analysis and simulations examine the transistor loading effect and amplitude stability. Results indicate that the Vackar VCO has improved amplitude stability compared to the Colpitts VCO. The improved amplitude stability is favorable for suppressing amplitude-to-phase (AM/PM) noise conversion. Two Vackar VCOs were fabricated to examine their phase noise. C-band Vackar VCO implemented in 0.18 μm RF CMOS shows oscillation frequency ranged from 4.85 to 4.93 GHz. The measured phase noise of the C-band Vackar VCO is -124.9 dB/Hz from 1 MHz offset at 4.9 GHz with a figure-of-merit (FOM) of -188 dBc/Hz. K-band Vackar VCO with gate inductive feedback is implemented in a 0.13 μm RF CMOS process. The oscillation frequency ranges from 19 to 19.95 GHz. The measured phase noise is -103 dBc/Hz from 1 MHz offset at 19.5 GHz with FOM of -182 dBc/Hz.","PeriodicalId":333572,"journal":{"name":"2014 International Conference on Advanced Technologies for Communications (ATC 2014)","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Advanced Technologies for Communications (ATC 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATC.2014.7043349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this paper, we present differential Vackar voltage-controlled oscillator (VCO) implemented for the first time in CMOS technology. The Vackar VCO provides good isolation between LC tank and loss-compensating active circuit; thus, excellent frequency stability is achieved over the frequency tuning range. Simple analysis and simulations examine the transistor loading effect and amplitude stability. Results indicate that the Vackar VCO has improved amplitude stability compared to the Colpitts VCO. The improved amplitude stability is favorable for suppressing amplitude-to-phase (AM/PM) noise conversion. Two Vackar VCOs were fabricated to examine their phase noise. C-band Vackar VCO implemented in 0.18 μm RF CMOS shows oscillation frequency ranged from 4.85 to 4.93 GHz. The measured phase noise of the C-band Vackar VCO is -124.9 dB/Hz from 1 MHz offset at 4.9 GHz with a figure-of-merit (FOM) of -188 dBc/Hz. K-band Vackar VCO with gate inductive feedback is implemented in a 0.13 μm RF CMOS process. The oscillation frequency ranges from 19 to 19.95 GHz. The measured phase noise is -103 dBc/Hz from 1 MHz offset at 19.5 GHz with FOM of -182 dBc/Hz.
一种新型的低相位噪声vackar压控振荡器
本文首次在CMOS技术上实现了差分Vackar压控振荡器(VCO)。Vackar VCO在LC槽和损耗补偿有源电路之间提供了良好的隔离;因此,在频率调谐范围内实现了优异的频率稳定性。简单的分析和仿真验证了晶体管的负载效应和振幅稳定性。结果表明,与Colpitts VCO相比,Vackar VCO具有更好的振幅稳定性。振幅稳定性的提高有利于抑制幅相噪声转换。制作了两个Vackar vco,对其相位噪声进行了检测。在0.18 μm RF CMOS中实现的c波段Vackar VCO振荡频率范围为4.85 ~ 4.93 GHz。c波段Vackar VCO在4.9 GHz频率下的相位噪声测量值为-124.9 dB/Hz,其品质因数(FOM)为-188 dBc/Hz。采用0.13 μm射频CMOS工艺,实现了带门感应反馈的k波段Vackar压控振荡器。振荡频率为19 ~ 19.95 GHz。在19.5 GHz频率下,测量到的相位噪声为-103 dBc/Hz, FOM为-182 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信