Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements

Abstract

In this work, we present a new approach to determine the spatial oxide fixed charge repartition in memory tunnel oxide from I-V measurements after positive electrical stress. The electron injection current of a tunneling capacitor is computed from the Poisson equation resolution in the dielectric layer. This method allows us to take into account the tunneling barrier deformation due to the presence of charges trapped within the dielectric layer.