Performance analysis of graphene based transistors: Modelling and simulation

2015 5th IEEE International Conference on System Engineering and Technology (ICSET) Pub Date : 2015-08-01 DOI:10.1109/ICSENGT.2015.7412441

Rohit Patel, K. Begam

引用次数: 3

Abstract

Graphene Nanoribbon FETs and Graphene Nanoribbon Tunnel FETs channel current models are simulated in MATLAB followed by implementation in PSpice as equivalent circuit models. Several characteristics of these transistors are compared to those of MOSFETs, keeping identical gate length of 20 nm for performance analysis. Based on the simulation results, it is found that graphene based transistors exhibit superior performance compared to MOSFETs.

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石墨烯基晶体管的性能分析:建模与仿真

在MATLAB中模拟了石墨烯纳米带场效应管和石墨烯纳米带隧道场效应管的通道电流模型，并在PSpice中实现了等效电路模型。将这些晶体管的几个特性与mosfet的特性进行比较，保持相同的栅极长度为20 nm以进行性能分析。仿真结果表明，石墨烯基晶体管的性能优于mosfet。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 5th IEEE International Conference on System Engineering and Technology (ICSET)

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