Dynamics of oxide confinement vertical cavity semiconductor lasers

Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551) Pub Date : 2002-08-07 DOI:10.1109/ICTON.2002.1009529

V. Lysak, I. Sukhoivanov, P. Ivanov, M. Marciniak

引用次数: 0

Abstract

In this work we investigate pulse behaviour of oxide confinement vertical cavity surface emitting laser for main and side modes. It's shown that the pulse delay time increases with increasing of structure radius. It allows to uniformity of pulse form for the main and side modes.

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氧化物约束垂直腔半导体激光器动力学

本文研究了氧化约束垂直腔面发射激光器主模和侧模的脉冲行为。结果表明，脉冲延迟时间随结构半径的增大而增大。它允许均匀的脉冲形式为主和侧模式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of 2002 4th International Conference on Transparent Optical Networks (IEEE Cat. No.02EX551)

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