Temporal Performance Degradation under RTN: Evaluation and Mitigation for Nanoscale Circuits

Hong Luo, Yu Wang, Yu Cao, Yuan Xie, Yuchun Ma, Huazhong Yang
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引用次数: 7

Abstract

Random telegraph noise (RTN) is one of the critical reliability concerns in nanoscale circuit design, and it is important to consider the impact of RTN on the circuits' temporal performance. This paper proposes a framework to evaluate the RTN-induced performance degradation and variation of digital circuits, and the evaluation results show that RTN can result in 54.4% degradation and 59.9% variation on the circuit delay at 16nm technology node. Power supply tuning and gate sizing techniques are investigated to demonstrate the impact of such circuit-level techniques on mitigating the RTN effect.
RTN下的时间性能退化:纳米级电路的评估和缓解
随机电报噪声(RTN)是纳米电路设计中重要的可靠性问题之一,考虑随机电报噪声对电路时间性能的影响非常重要。本文提出了一个评估RTN引起的数字电路性能下降和变化的框架,评估结果表明,RTN在16nm技术节点上可导致54.4%的性能下降和59.9%的电路延迟变化。研究了电源调谐和栅极尺寸技术,以证明这种电路级技术对减轻RTN效应的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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