{"title":"A capacitor cross-coupled differential cascade low-noise amplifier","authors":"M. S. Khalili, M. Jalali","doi":"10.1109/ICEDSA.2012.6507799","DOIUrl":null,"url":null,"abstract":"A gm-boosting technique implemented by capacitor cross-coupling of common-gate devices in a differential cascode low-noise amplifier (LNA) is presented for improving the gain and noise figure (NF) without significant increase in current consumption. The conventional cascode LNA exhibits a relatively low performance at millimeter-wave frequencies due to carrier mobility limitations and device parasitic in the common-gate stage. A cascode LNA is designed in a 180 nm RF CMOS process at center frequency of 40 GHz. It achieves a gain of 8.8 dB and a NF of 4.2 dB while reverse isolation is better than -15 dB. The LNA circuit consumes 6.5 mW from a 1.8 V supply.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEDSA.2012.6507799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A gm-boosting technique implemented by capacitor cross-coupling of common-gate devices in a differential cascode low-noise amplifier (LNA) is presented for improving the gain and noise figure (NF) without significant increase in current consumption. The conventional cascode LNA exhibits a relatively low performance at millimeter-wave frequencies due to carrier mobility limitations and device parasitic in the common-gate stage. A cascode LNA is designed in a 180 nm RF CMOS process at center frequency of 40 GHz. It achieves a gain of 8.8 dB and a NF of 4.2 dB while reverse isolation is better than -15 dB. The LNA circuit consumes 6.5 mW from a 1.8 V supply.