A capacitor cross-coupled differential cascade low-noise amplifier

M. S. Khalili, M. Jalali
{"title":"A capacitor cross-coupled differential cascade low-noise amplifier","authors":"M. S. Khalili, M. Jalali","doi":"10.1109/ICEDSA.2012.6507799","DOIUrl":null,"url":null,"abstract":"A gm-boosting technique implemented by capacitor cross-coupling of common-gate devices in a differential cascode low-noise amplifier (LNA) is presented for improving the gain and noise figure (NF) without significant increase in current consumption. The conventional cascode LNA exhibits a relatively low performance at millimeter-wave frequencies due to carrier mobility limitations and device parasitic in the common-gate stage. A cascode LNA is designed in a 180 nm RF CMOS process at center frequency of 40 GHz. It achieves a gain of 8.8 dB and a NF of 4.2 dB while reverse isolation is better than -15 dB. The LNA circuit consumes 6.5 mW from a 1.8 V supply.","PeriodicalId":132198,"journal":{"name":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Electronics Design, Systems and Applications (ICEDSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEDSA.2012.6507799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

A gm-boosting technique implemented by capacitor cross-coupling of common-gate devices in a differential cascode low-noise amplifier (LNA) is presented for improving the gain and noise figure (NF) without significant increase in current consumption. The conventional cascode LNA exhibits a relatively low performance at millimeter-wave frequencies due to carrier mobility limitations and device parasitic in the common-gate stage. A cascode LNA is designed in a 180 nm RF CMOS process at center frequency of 40 GHz. It achieves a gain of 8.8 dB and a NF of 4.2 dB while reverse isolation is better than -15 dB. The LNA circuit consumes 6.5 mW from a 1.8 V supply.
电容交叉耦合差分级联低噪声放大器
在差分级联码低噪声放大器(LNA)中,提出了一种通过电容交叉耦合共栅极器件实现的增益增强技术,在不显著增加电流消耗的情况下提高增益和噪声系数(NF)。由于载波迁移率的限制和共门级的器件寄生,传统级联LNA在毫米波频率下表现出相对较低的性能。在中心频率为40ghz的180nm RF CMOS工艺中设计了级联码LNA。增益为8.8 dB, NF为4.2 dB,反向隔离优于-15 dB。LNA电路从1.8 V电源消耗6.5 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信