A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.863315

Xiangdong Zhang, Chone Saycocie, S. Munro, G. Henderson

引用次数: 24

Abstract

This paper presents for the first time a high efficiency SiGe HBT based CDMA power amplifier (PA) for PCS handset applications. Under IS-95 CDMA modulation at 1.88 GHz and 3.4 V bias voltage, the two-stage amplifier exhibits 41% power-added efficiency and 30 dBm linear output power with -46 dBc adjacent-channel-power-ratio (ACPR) and 23 dB gain. The SiGe HBTs used in the amplifier were fabricated in a production qualified 8-inch SiGe BiCMOS production process. This performance demonstrates for the first time that SiGe technology can provide competitive performance for PCS wireless handset PA applications.

查看原文本刊更多论文

具有40% PAE的SiGe HBT功率放大器，适用于PCS CDMA应用

本文首次提出了一种高效的基于SiGe HBT的CDMA功率放大器(PA)。在1.88 GHz和3.4 V偏置电压的IS-95 CDMA调制下，该两级放大器的功率增加效率为41%，线性输出功率为30 dBm，邻接通道功率比(ACPR)为-46 dBc，增益为23 dB。放大器中使用的SiGe hbt是在生产合格的8英寸SiGe BiCMOS生产工艺中制造的。这一性能首次证明了SiGe技术可以为PCS无线手机PA应用提供具有竞争力的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

自引率

0.00%

发文量