Low-power memory repair for high defect densities

P. Papavramidou, M. Nicolaidis
{"title":"Low-power memory repair for high defect densities","authors":"P. Papavramidou, M. Nicolaidis","doi":"10.1109/IOLTS.2015.7229853","DOIUrl":null,"url":null,"abstract":"We illustrate that memory repair for high fault rates can be exploited for improving yield, extending lifetime, reducing power, and improving reliability, and consequently can be used to push aggressively the limits of technology scaling. We also present recent advances in low-area and low-power memory repair for high fault rates. As one of our main goals is to use this repair for reducing as much as possible the power dissipation of the memory system, the power dissipation of the repair circuitry should be kept as low as possible. To comply with this constraint, we also propose a repair approach, which further reduces the power dissipation of the repair circuit.","PeriodicalId":413023,"journal":{"name":"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2015.7229853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

We illustrate that memory repair for high fault rates can be exploited for improving yield, extending lifetime, reducing power, and improving reliability, and consequently can be used to push aggressively the limits of technology scaling. We also present recent advances in low-area and low-power memory repair for high fault rates. As one of our main goals is to use this repair for reducing as much as possible the power dissipation of the memory system, the power dissipation of the repair circuitry should be kept as low as possible. To comply with this constraint, we also propose a repair approach, which further reduces the power dissipation of the repair circuit.
低功耗存储器修复高缺陷密度
我们说明了高故障率的存储器修复可以用于提高产量、延长寿命、降低功耗和提高可靠性,因此可以用于积极推动技术扩展的限制。我们还介绍了针对高故障率的低面积和低功耗存储器修复的最新进展。由于我们的主要目标之一是使用这种修复来尽可能地降低存储系统的功耗,因此修复电路的功耗应保持尽可能低。为了满足这一约束,我们还提出了一种修复方法,进一步降低了修复电路的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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