Microwave Noise Analysis in InP and GaAs HBTs

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751054

P. Sakalas, T. Nardmann, A. Simukovic, M. Schroter, H. Zirath

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引用次数: 1

Abstract

High frequency (h.f.) noise characteristics of advanced InP and GaAs HBTs were measured and simulated. The compact model (CM) HICUM/L2 v2.34 was used for the DC, AC and noise simulation as well as for the noise analysis. Geometry scalable model parameters for InP HBTs with the different emitter widths and lengths were extracted from temperature dependent DC and AC measurements on HBTs and special test structures. The CM is in good agreement with measured data. Non-equilibrium electron transport was found to shape fT and fmax for GaAs HBTs. For both HBT types, based on the noise source decomposition, an analysis of the influence of the different noise sources on the minimum noise figure (NFmin) was performed at different base-collector biases VBC. It was found that noise due to intervalley transfer related electron scattering has negligible impact on NFmin for both InP and GaAs HBTs. H.f. noise reduction as a result of Coulomb current blocking in GaAs HBTs was confirmed. Shot noise correlation was investigated in GaAs HBTs with different base layer thickness (wB) and base doping for the optimal h.f. noise behavior.

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InP和GaAs HBTs中的微波噪声分析

对先进的InP和GaAs hbt的高频噪声特性进行了测量和仿真。采用紧凑模型(CM) HICUM/L2 v2.34进行直流、交流和噪声仿真，并进行噪声分析。从不同发射极宽度和长度的InP HBTs和特殊测试结构的温度相关直流和交流测量数据中提取几何可缩放模型参数。CM与实测数据吻合较好。发现非平衡电子传递影响了GaAs HBTs的fT和fmax。对于两种HBT类型，在噪声源分解的基础上，分析了不同噪声源对不同基极集电极偏差VBC下最小噪声系数(NFmin)的影响。发现谷间转移相关电子散射引起的噪声对InP和GaAs HBTs的NFmin的影响可以忽略不计。证实了GaAs hbt中库仑电流阻塞的高频降噪效果。研究了不同基材厚度(wB)和基材掺杂情况下GaAs HBTs的散粒噪声相关性，以获得最佳的高频噪声行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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