A Compact Model for the Electroforming Process of Memristive Devices

Abstract

Memristive devices based on the valence change mechanism undergo an electroforming process before they can be switched repetitively between different resistance states. This electroforming process can already lead to device-to-device variability in a memristive array. Here, we propose a physics-based compact model for the electroforming process of filamentary memristive switches based on the valence change mechanism. The model is verified by experimental data of ZrOx-based devices. Using this model, the forming process of a whole memory array is investigated. It is shown that the parasitic IR-drop of the word and bit lines can influence the final state of the device after the electroforming process. In addition, the simulation results reveal that the location of the cell in the array influences the final state.