A Reliable PUF in a Dual Function SRAM

Mohd Syafiq Mispan, Shengyu Duan, Basel Halak, Mark Zwolinski
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引用次数: 11

Abstract

An SRAM Physical Unclonable Function (SRAM-PUF) is a potential solution for lightweight secure key generation, and is particularly suitable for resource-constrained security devices. An SRAM-PUF is able to generate random and unique cryptographic keys based on start-up values (SUVs) by exploiting intrinsic manufacturing process variations. For cost efficiency the available on-chip SRAM in a system can be reused as a PUF. As CMOS technology scales down, ageing-induced Negative Bias Temperature Instability (NBTI) becomes more pronounced, resulting in asymmetric degradation of memory bit cells after prolonged storage of the same bit values. This causes unreliable SUVs for an SRAM-PUF. In this paper, we investigate the bit probabilities in an instruction cache and the effect on long-term reliability. We show that the signal probability in a 32-bit ARM instruction cache has a predictable pattern. Hence, we propose a bit selection technique to mitigate the NBTI effect when an instruction cache is used as a PUF. We show that this technique can reduce the predicted bit error in an SRAM-PUF from 14.18% to 5.58% over 5 years. Consequently, as the bit error reduces, the area overhead of the error-correction is about $6 \times$ smaller compared to that without a bit selection technique.
双功能SRAM中的可靠PUF
SRAM物理不可克隆功能(SRAM- puf)是轻量级安全密钥生成的潜在解决方案,特别适用于资源受限的安全设备。SRAM-PUF能够利用内在的制造过程变化,基于启动值(suv)生成随机和唯一的加密密钥。为了节省成本,系统中可用的片上SRAM可以作为PUF重复使用。随着CMOS技术的缩小,老化引起的负偏置温度不稳定性(NBTI)变得更加明显,导致在长时间存储相同位值后内存位单元的不对称退化。这导致SRAM-PUF的suv不可靠。本文研究了指令缓存中的位概率及其对长期可靠性的影响。我们展示了32位ARM指令缓存中的信号概率具有可预测的模式。因此,当指令缓存用作PUF时,我们提出了一种位选择技术来减轻NBTI效应。我们表明,该技术可以在5年内将SRAM-PUF的预测误码从14.18%降低到5.58%。因此,随着误码的减少,纠错的面积开销比没有比特选择技术的情况下大约小6倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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