Mcm-D Technology for a Communication Application

W. Radlik, K. Plehnert, M. Zellner, A. Achen, R. Heistand, D. Castillo, R. Urscheler
{"title":"Mcm-D Technology for a Communication Application","authors":"W. Radlik, K. Plehnert, M. Zellner, A. Achen, R. Heistand, D. Castillo, R. Urscheler","doi":"10.1109/ICMCM.1994.753582","DOIUrl":null,"url":null,"abstract":"Taking advantage of the inherent capabilities of thin film technology, a cost competitive MCM-D has been built providing for a data communication assembly. For the dielectric layers, the novel photodefinable benzocyclobutene (BCB) has been employed. Thus, the material performance has been investigated and new processing steps have been developed to achieve a highly reliable formation of 10 /spl m/m vias at least.","PeriodicalId":363745,"journal":{"name":"Proceedings of the International Conference on Multichip Modules","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference on Multichip Modules","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMCM.1994.753582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

Taking advantage of the inherent capabilities of thin film technology, a cost competitive MCM-D has been built providing for a data communication assembly. For the dielectric layers, the novel photodefinable benzocyclobutene (BCB) has been employed. Thus, the material performance has been investigated and new processing steps have been developed to achieve a highly reliable formation of 10 /spl m/m vias at least.
通信应用中的Mcm-D技术
利用薄膜技术的固有能力,已经构建了具有成本竞争力的MCM-D,提供数据通信组件。对于介电层,采用了新型光可定义苯并环丁烯(BCB)。因此,已经研究了材料性能并开发了新的加工步骤,以实现至少10 /spl m/m的高度可靠的过孔形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信