{"title":"Optoelectronic Class AB Microwave Power Amplifier","authors":"C.-J. Huang, R. O’Connell","doi":"10.1109/MODSYM.2006.365203","DOIUrl":null,"url":null,"abstract":"Recent power amplifiers for transmit/receive (TR) modules have been configured in the Class AB or push-pull mode with a theoretical efficiency of 78.5% and an operational efficiency of only 20% at X-band (8-12.5 GHz) frequencies. In this paper, we present results of a simulation study of a new scheme of power amplifier, in particular, an optoelectronic (OE) Class AB push-pull microwave power amplifier (MPA). With this amplifier, high circuit efficiency and reasonable output power can be achieved at X-band by utilizing a pair of novel photoconductive semiconductor switches (PCSSs) based on intrinsic GaAs instead of the traditional microwave transistors","PeriodicalId":410776,"journal":{"name":"Conference Record of the 2006 Twenty-Seventh International Power Modulator Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 2006 Twenty-Seventh International Power Modulator Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MODSYM.2006.365203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Recent power amplifiers for transmit/receive (TR) modules have been configured in the Class AB or push-pull mode with a theoretical efficiency of 78.5% and an operational efficiency of only 20% at X-band (8-12.5 GHz) frequencies. In this paper, we present results of a simulation study of a new scheme of power amplifier, in particular, an optoelectronic (OE) Class AB push-pull microwave power amplifier (MPA). With this amplifier, high circuit efficiency and reasonable output power can be achieved at X-band by utilizing a pair of novel photoconductive semiconductor switches (PCSSs) based on intrinsic GaAs instead of the traditional microwave transistors