On Tunable Compact Analog Circuits with Nanoscale DG-MOSFETs

Abstract

DG-MOSFETs, ideally suited for digital applications below 50nm, can be effectively used also for analog circuits, especially in independent drive (IDDG) configuration. As MOSFETs with two closely coupled channels, they can locally and dynamically alter the front gate threshold by an applied back-gate bias, thus enabling tunability. We explore how the IDDG-MOSFETs could be deployed as creative tools to conveniently tune the response of conventional CMOS analog circuits such as current mirrors, integrators, operational transconductance amplifiers and high-order filters. We illustrate the design of such tunable circuits and analyze their performance using TCAD simulations. The topologies and biasing schemes explored here show how the nanoscale IDDG-MOSFETs can have a big impact on the realization of efficient and compact circuits commonly used in low-power and wireless communication systems.