The role and suppression of carrier leakage in 1.5 /spl mu/m GaInNAsSb/GaAs lasers

Abstract

Recently, the first room temperature, continuous wave (CW), 1.49 /spl mu/m GaAs-based lasers were demonstrated. The injection efficiency, /spl eta//sub inj/, was quite low in these devices, /spl sim/45%. Determining the origin of the low /spl eta//sub inj/ allows further improvements in device performance. The origin of the low /spl eta//sub inj/ is due to carrier leakage and nonradiative recombination. In this paper, several techniques are proposed to reduce this defect-enhanced electron leakage mechanism, including a novel asymmetric quantum well structure.