Temperature dependent analysis of heterojunction silicon solar cells: Role of intrinsic layer thickness

Abstract

Temperature dependent dark current voltage characteristics of p type hydrogenated amorphous silicon/intrinsic a-Si: H/n-type crystalline silicon solar cells with varying the intrinsic layer thickness are discussed to elucidate the dominant current transport phenomena in such structures. The a-Si:H films were deposited by Hot-Wire chemical vapor deposition (HWCVD) technique. The charge carrier conduction behavior of the a-Si:H/c-Si junction is strongly influenced by the intrinsic layer. The structure without intrinsic layer shows recombination at the interface whereas multi tunneling capture emission (MTCE) process is dominant after inserting a thin intrinsic layer in between the p-a-Si:H/n-c-Si interface.