Compact Integration of Sub-Harmonic Resistive Mixer with Differential Double Slot Antenna in G-Band Using 50nm InP-HEMT MMIC Process

Y. Karandikar, H. Zirath, Yu Yan, V. Vassilev
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引用次数: 7

Abstract

Sub-Harmonic resistive HEMT based mixers in Gband have been designed and integrated with Double Slot Antenna in Differential Configuration for the first time. This novel topology shows compact integration of active devices between antenna ports while achieving 25 GHz bandwidth around 200 GHz. The dual-gate 50nm x 15um InP HEMT used in the design achieves the conversion loss of 15 dB with +3 dBm LO power drive. Furthermore, a similar topology when used as a Harmonic mixer using a single gate device offers 16.5 dB conversion loss for +4 dBm LO power. For compact integration, via hole matching on slot antenna is also presented.
采用50nm InP-HEMT MMIC工艺实现g波段差分双槽天线亚谐波阻性混频器的紧凑集成
首次设计了基于亚谐波电阻HEMT的Gband混频器,并将其与差分配置的双槽天线集成在一起。这种新颖的拓扑结构显示了天线端口之间有源器件的紧凑集成,同时实现了200 GHz左右的25 GHz带宽。本设计采用双栅50nm × 15um InP HEMT,在+ 3dbm LO功率驱动下实现了15db的转换损耗。此外,当使用单栅极器件作为谐波混频器时,类似的拓扑结构在+4 dBm LO功率下提供16.5 dB转换损耗。为了实现紧凑的集成,还提出了在槽天线上进行通孔匹配。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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