T. M. Khanshan, K. G. Kjeldgard, E. Ulvestad, D. Wisland, T. Lande
{"title":"CMOS photosensors for LIDAR","authors":"T. M. Khanshan, K. G. Kjeldgard, E. Ulvestad, D. Wisland, T. Lande","doi":"10.1109/NORCHIP.2018.8573471","DOIUrl":null,"url":null,"abstract":"In this paper photosensors for CMOS LIDAR intended for non-invasive biosensing are presented. Adequate depth resolution requires high-speed sampling and high-speed photosensors, hard to make in standard CMOS. In this paper CMOS photodiodes are evaluated with respect to speed and sensitivity designed for use in a single-chip LIDAR system. Diodes dimensions are quite small $(5 \\mu m \\times 5 \\mu m)$ suited for larger arrays. Simple assessment circuits are used in combination with high-speed optical instrumentation for characterization of different photosensors structures fabricated in standard $90 nm$ CMOS.","PeriodicalId":152077,"journal":{"name":"2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHIP.2018.8573471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper photosensors for CMOS LIDAR intended for non-invasive biosensing are presented. Adequate depth resolution requires high-speed sampling and high-speed photosensors, hard to make in standard CMOS. In this paper CMOS photodiodes are evaluated with respect to speed and sensitivity designed for use in a single-chip LIDAR system. Diodes dimensions are quite small $(5 \mu m \times 5 \mu m)$ suited for larger arrays. Simple assessment circuits are used in combination with high-speed optical instrumentation for characterization of different photosensors structures fabricated in standard $90 nm$ CMOS.