Step Soldering Factors Affecting the Reliability of Ag-Pd Thick Film Conductor Pads

T. Pan, H. D. Blair, D. Mitlin, G. M. Crosbie, J. Nicholson, J. Hangas
{"title":"Step Soldering Factors Affecting the Reliability of Ag-Pd Thick Film Conductor Pads","authors":"T. Pan, H. D. Blair, D. Mitlin, G. M. Crosbie, J. Nicholson, J. Hangas","doi":"10.1115/imece1996-0898","DOIUrl":null,"url":null,"abstract":"\n One of the essential thick film materials on the hybrid circuit is the conductor which performs as an interconnection between discrete components. However, metallurgical reaction between the conductor and solder during the soldering or thermal aging/cycling may cause electrical failure and/or loss of adhesive strength due to the reaction of Ag/Pd with Sn and subsequent intermetallics formed. A step soldering process, which applies a high-Pb solder layer over the conductor layer before the eutectic or near-eutectic Sn-Pb solder is applied, has been shown to prevent contact between the conductor and Sn in the solder, as long as the high-Pb layer does not dissolve into the low-Pb layer. Experiments were carried out to quantify the isothermal interdiffusion reaction rate and the interface displacement between the 88Pb-10Sn-2Ag and the eutectic 63Sn-37Pb solder layers between 195 and 235°C. The results were analyzed by the methodology developed by Lommel and Chalmers (1959) which was based on Nernst-Brunner theory of dissolution (Moelwyn-Hughes, 1947). The displacement of the interface follows an Arrhenius relationship with an activation energy of 98 KJ/mole, which is close to the activation energy of solid Sn diffusion into Pb. A process window was constructed to show that temperature is a more sensitive parameter influencing the reaction rate than time. A mathematical model was applied to predict the interfacial displacement during the reflow process and was found to correlate well with experimental results.","PeriodicalId":375055,"journal":{"name":"Sensing, Modeling and Simulation in Emerging Electronic Packaging","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensing, Modeling and Simulation in Emerging Electronic Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1115/imece1996-0898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

One of the essential thick film materials on the hybrid circuit is the conductor which performs as an interconnection between discrete components. However, metallurgical reaction between the conductor and solder during the soldering or thermal aging/cycling may cause electrical failure and/or loss of adhesive strength due to the reaction of Ag/Pd with Sn and subsequent intermetallics formed. A step soldering process, which applies a high-Pb solder layer over the conductor layer before the eutectic or near-eutectic Sn-Pb solder is applied, has been shown to prevent contact between the conductor and Sn in the solder, as long as the high-Pb layer does not dissolve into the low-Pb layer. Experiments were carried out to quantify the isothermal interdiffusion reaction rate and the interface displacement between the 88Pb-10Sn-2Ag and the eutectic 63Sn-37Pb solder layers between 195 and 235°C. The results were analyzed by the methodology developed by Lommel and Chalmers (1959) which was based on Nernst-Brunner theory of dissolution (Moelwyn-Hughes, 1947). The displacement of the interface follows an Arrhenius relationship with an activation energy of 98 KJ/mole, which is close to the activation energy of solid Sn diffusion into Pb. A process window was constructed to show that temperature is a more sensitive parameter influencing the reaction rate than time. A mathematical model was applied to predict the interfacial displacement during the reflow process and was found to correlate well with experimental results.
影响Ag-Pd厚膜导体焊盘可靠性的步进焊接因素
混合电路中必不可少的厚膜材料之一是导体,它在离散元件之间起着互连作用。然而,在焊接或热老化/循环过程中,导体和焊料之间的冶金反应可能导致电气故障和/或由于银/钯与锡的反应和随后形成的金属间化合物而导致粘合强度的损失。在使用共晶或近共晶Sn- pb焊料之前,在导体层上涂上高铅焊料层的阶梯焊接工艺已被证明可以防止导体和焊料中的Sn接触,只要高铅层不溶解到低铅层中。在195 ~ 235℃范围内,定量测定了88Pb-10Sn-2Ag与63Sn-37Pb共晶钎料层之间的等温互扩散反应速率和界面位移。结果由Lommel和Chalmers(1959)开发的方法进行分析,该方法基于Nernst-Brunner溶解理论(Moelwyn-Hughes, 1947)。界面位移符合Arrhenius关系,活化能为98 KJ/mol,接近固体Sn向Pb扩散的活化能。结果表明,温度对反应速率的影响比时间更敏感。应用数学模型对回流过程中的界面位移进行了预测,结果与实验结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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