Haze and pellicle material selection for haze free

Sangjin Cho, Byung Pil Lee, Ji Hyang Kim, Won Kyeong Song, Heon Kyu Choi, Gil Su Lee, Sung Wan Kim, J. Kim
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引用次数: 2

Abstract

The problem of haze occurrence in photolithography is one of the most important problems in the lithography industry. Understanding the conditions and mechanisms that generate haze defects provide important clues for preparing pellicle, photomask, and lithography environments for haze-free photolithography. In the pellicle industry, self-help efforts are being made to reduce the contribution of pellicles to haze occurrence, but haze occurs in the complex causal relationship of pellicles, photomasks, and lithography (fab environments). Therefore, haze reduce is difficult to solve with pellicle industry's efforts only. In this paper, we investigated microscopic images and occurrence mechanisms of haze defects formed from actually suspected chemicals, IC results of sulfate and ammonium ions, ArF light (excimer laser) resistance of anodized and new frame, also summarized the results of haze occurrence from previous research, and examined the occurrence pattern and location according to haze cause. Based on this, we propose the pellicle solution to control the haze reduction such as material selection of pellicle.
雾霾和膜材的选择为无雾霾
光刻中的雾霾问题是光刻行业中最重要的问题之一。了解产生雾霾缺陷的条件和机制为制备膜、光掩膜和无雾光刻的光刻环境提供了重要线索。在薄膜行业,人们正在努力减少薄膜对雾霾发生的贡献,但雾霾的发生是在薄膜、光罩和光刻(晶圆厂环境)复杂的因果关系中发生的。因此,雾霾的减少很难仅靠膜业的努力来解决。本文研究了实际可疑化学品、硫酸盐和铵离子的IC结果、阳极氧化和新框架的ArF光(准分子激光)抗性形成的雾霾缺陷的显微图像和发生机制,并总结了前人研究的雾霾发生结果,并根据雾霾原因检查了雾霾的发生模式和位置。在此基础上,提出了膜层材料选择等控制雾霾减少的膜层解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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