An approach to modeling and testing memories and its application to CAMs

P. R. Sidorowicz, J. Brzozowski
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引用次数: 19

Abstract

An approach to modeling and testing memories is presented and illustrated using an n-word by l-bit (n/spl times/l) static content-addressable memory (GAM) array for cell input stuck-at faults. An input stuck at fault model for a CAM is defined, and a test of length 7n+2l+5 with 100% fault coverage with respect to this fault model is constructed. This test also detects all the usual cell stuck-at and transition faults. Finally, some design-for-testability (DFT) modifications facilitating a further reduction of this test's length are proposed.
存储器的建模和测试方法及其在cam中的应用
提出了一种内存建模和测试方法,并说明了使用n字乘l位(n/spl次/l)静态内容可寻址内存(GAM)阵列用于单元输入卡故障。定义CAM的输入卡在故障模型上,构造长度为7n+2l+5且故障覆盖率为100%的故障模型测试。此测试还检测所有常见的单元卡住和转换错误。最后,提出了一些可测试性设计(DFT)修改,有助于进一步减少该测试的长度。
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