Lasing operation of ZnTe based yellow-green laser diodes

Abstract

Current injection lasing operation of ZnTe based yellow-green light semiconductor laser diodes (LDs) with ZnCdTe active layer and MgZnSeTe cladding layers have been achieved, for the first time. The lasing characteristics were evaluated with a single pulse current injection mode at low temperature. The lowest threshold current density of the LD was 2.7 kA/cm2 at 100 K. The maximum lasing temperature was 175 K and the observed lasing wavelength ranged from 564 to 576 nm