A breakdown voltage doubler for high voltage swing drivers

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571) Pub Date : 2004-11-22 DOI:10.1109/CICC.2004.1358747

Sam Mandegaran, A. Hajimiri

引用次数: 9

Abstract

A novel breakdown voltage (BV) doubler is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 /spl Omega/ load was implemented in a SiGe BiCMOS process. It uses the BV-doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor.

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用于高压摆振驱动器的击穿电压倍频器

介绍了一种新型的击穿电压倍频器，使低击穿电压晶体管产生高输出电压振荡成为可能。通过对舞台进行时序分析，优化舞台的动态响应。在SiGe BiCMOS工艺中实现了50 /spl ω /负载下差分输出摆幅为8 V的10gb /s光调制器驱动器。它使用bv倍频器拓扑结构来实现两倍于集电极-发射极击穿电压的输出摆动，而不会对任何单个晶体管造成压力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)

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