On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351831

P. Chevalier, N. Zerounian, B. Barbalat, F. Aniel, A. Chantre

引用次数: 20

Abstract

The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various ftau/fmax trade-offs is performed. It allows to identify the principal development axes to reach half-terahertz at 300 K, a frequency already obtained at 40 K.

查看原文本刊更多论文

利用低温测量研究Si/SiGe:C超导体在太赫兹工作中的潜力

在室温和低温下，对具有各种ftau/fmax权衡的SiGe HBTs进行了传递时间分析。它允许识别主发展轴在300 K达到半太赫兹，一个已经在40 K获得的频率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

自引率

0.00%

发文量