Current-voltage model of a graphene nanoribbon p-n junction and Schottky junction diode

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Iet Circuits Devices & Systems Pub Date : 2021-07-30 DOI:10.1049/cds2.12092

Samira Shamsir, Laila Parvin Poly, Rajat Chakraborty, Samia Subrina

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引用次数: 4

Abstract

This work presents a simplified analytical model of a p-n junction diode based on a graphene nanoribbon (GNR) and a unique type of Schottky diode based on metallic graphene and semi-conducting GNRs. Due to the one-dimensional nature of GNRs, their electrostatic analyses need to be quite different from that of bulk devices. Two approaches have been taken to model the charge distribution in this depletion region, namely, the point charge approximation for the GNR p-n junction diode and the line charge approximation for the graphene/GNR Schottky diode. Analytical expressions for the spatial distribution of electric field and potential have been derived and the results are quite distinct from their bulk counterparts. The current-voltage relation of each diode has been investigated within the approximation of Shockley's law of junctions. The width dependency of the currents for these diodes has also been modelled and it has been found that the current density of both the diodes decreases with decreasing width. Such an analysis can encourage the modelling of next-generation GNR-based high-speed electronic devices.

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石墨烯纳米带pn结和肖特基结二极管的电流-电压模型

本文提出了一种基于石墨烯纳米带(GNR)的p-n结二极管和一种基于金属石墨烯和半导体GNR的独特肖特基二极管的简化分析模型。由于gnr的一维性质，其静电分析需要与体器件有很大的不同。采用了两种方法来模拟该耗尽区的电荷分布，即GNR p-n结二极管的点电荷近似和石墨烯/GNR肖特基二极管的线电荷近似。导出了电场和电势空间分布的解析表达式，其结果与体上的解析表达式有很大的不同。在肖克利结定律的近似下，研究了每个二极管的电流-电压关系。对这两种二极管电流的宽度依赖性进行了建模，发现两种二极管的电流密度都随着宽度的减小而减小。这样的分析可以促进下一代基于gnr的高速电子器件的建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Iet Circuits Devices & Systems 工程技术-工程：电子与电气

CiteScore

3.80

自引率

7.70%

发文量

审稿时长

3 months

期刊介绍： IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers