Characteristics & Reliability of 100Å Oxides

D. Baglee
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引用次数: 16

Abstract

The electrical characteristics and the long term reliability of 100Å silicon dioxide films is examined in detail. In this paper the initial "as grown" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Å oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.
100Å氧化物的特性与可靠性
详细研究了100Å二氧化硅薄膜的电学特性和长期可靠性。本文介绍了该材料的初始“生长”特性,并讨论了后续工艺步骤的影响。考察了100Å氧化物经过完整双能级多晶硅工艺后的长期可靠性。得到活化能为0.3eV,电场加速度为100/MV/cm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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