A Q-band 1 watt 30% power-added-efficiency hetero-junction FET

Abstract

A series of Q-band hetero-junction power FETs with gate widths of 400, 800, 1600 and 2400 /spl mu/m has been developed. The FETs use an n-type GaAs layer as a channel with an AlGaAs layer as a Schottky contact layer. Each FET has two cell configuration with monolithically integrated 1/4 wavelength impedance transformer for the input and output matching networks. The 2400 /spl mu/m-gate-width device delivered an output power of 30 dBm with 4.4 dB gain and 30.1% power-added-efficiency.