Design Margin Methodology for DDR Interface

Soujanna Sarkar, A. Brahme, G. Subash Chandar
{"title":"Design Margin Methodology for DDR Interface","authors":"Soujanna Sarkar, A. Brahme, G. Subash Chandar","doi":"10.1109/EPEP.2007.4387151","DOIUrl":null,"url":null,"abstract":"In this paper, we describe the design margin methodology that comprehends uncertainties at both chip and board level for a DDR-1 interface. These include effects that are not modeled in static timing analysis and SPICE. This methodology enables to predictably ensure silicon performance.","PeriodicalId":402571,"journal":{"name":"2007 IEEE Electrical Performance of Electronic Packaging","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Electrical Performance of Electronic Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEP.2007.4387151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

Abstract

In this paper, we describe the design margin methodology that comprehends uncertainties at both chip and board level for a DDR-1 interface. These include effects that are not modeled in static timing analysis and SPICE. This methodology enables to predictably ensure silicon performance.
DDR接口的设计余量方法
在本文中,我们描述了设计余量方法,该方法理解了DDR-1接口的芯片和板级的不确定性。这些包括在静态时序分析和SPICE中没有建模的效果。这种方法可以预见地确保硅的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信