A low-power RF/analog front-end architecture for LF passive RFID tags with dynamic power sensing

F. P. Cortes, J. P. M. Brito, Rafael Cantalice, Everton Ghignatti, A. Olmos, F. Chávez, M. Lubaszewski
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引用次数: 14

Abstract

This paper presents a low power, low voltage RF/analog front-end architecture for LF RFID tags with a dynamic power sensing scheme. The front-end converts the incoming RF power into DC using a system that adjusts its performance according to the available RF power. The power sensing scheme, composed by a feedback system that “regulates” the RF clamp stage, improves the incoming available power to the system. All building blocks together with the RF air link and antenna interface were modeled using digital and electrical signals with high abstraction level, validating the architecture. Part of the proposed AFE architecture was silicon proven in a preliminary CMOS 0.18μm process test chip. This preliminary part includes the regulation stages and part of the RF section. It shows excellent results for a maximum of 3μA DC current consumption, over a wide range of input RF power.
具有动态功率传感的低频无源RFID标签的低功耗RF/模拟前端架构
本文提出了一种低功耗、低电压的射频/模拟前端架构,用于低频射频标签的动态功率传感方案。前端将输入的射频功率转换成直流电,系统根据可用的射频功率调整其性能。功率传感方案由一个“调节”射频钳级的反馈系统组成,提高了系统的输入可用功率。所有构建模块以及射频空中链路和天线接口都使用具有高抽象级别的数字和电子信号进行建模,验证了体系结构。提出的AFE架构的一部分在初步的CMOS 0.18μm工艺测试芯片中进行了硅验证。这个初步部分包括调节阶段和部分射频部分。在较宽的输入射频功率范围内,最大直流电流消耗为3μA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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