The Trend of Different Parameters for Designing Integrated Circuits from 1973 to 2019 and Linked to Moore's Law

Nashmin Alam, Murshed Alam
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引用次数: 4

Abstract

The number of transistors per chip, feature sizes, frequencies, transistor densities, number of cores, thermal design powers, die areas, and storage capacities of Integrated Circuits (ICs) used for different processing units and memories were collected from various websites from 1973 to 2019 and plotted against year of introduction of ICs in semi-log paper to find the trend with R-squared (R2) value using Microsoft Excel. The R2 values of the trend lines for the above parameters were over 0.922 which indicated that more than 92% of data satisfied the fitting lines except for thermal design power (R2 = 0.7) and die area (R2 = 0.4 to 0.6). It was observed that the growths of transistor counts, transistor densities, frequencies, and thermal design powers for different processing units were growing exponentially and doubled every 16.8 to 24 months from 1973 to 2019 except the growth of thermal design powers (TDP) and frequencies of ICs which were increased up to 2003. After that, the growth of TDP and frequencies are nearly linear up to the present day. The growth of the above parameters for ICs of different memories was a little faster, it was doubled every 14 to 16 months. The feature sizes shrunk 2 times every 18 months. A strong relation was found between feature sizes and transistor densities (R2 = 0.9) and observed that one fold of feature size decreased for the increasing of 2-3 folds of transistor densities. It was observed that different parameters for ICs designing from 1973 to 2019 kept pace with Moore's law. It may be concluded that the decrease of feature size, increasing of transistor count and transistor density in ICs design will follow Moore's law for some more years with the limitation of frequency and power of ICs.
1973 - 2019年集成电路设计参数变化趋势及与摩尔定律的关联
从1973年至2019年,从各个网站收集了用于不同处理单元和存储器的集成电路(ic)的每个芯片的晶体管数量,特征尺寸,频率,晶体管密度,内核数量,热设计功率,芯片面积和存储容量,并在半日志论文中根据ic的引入年份绘制,使用Microsoft Excel找到r平方(R2)值的趋势。上述参数的趋势线R2值均大于0.922,表明除热设计功率(R2 = 0.7)和模具面积(R2 = 0.4 ~ 0.6)外,92%以上的数据符合拟合线。从1973年到2019年,不同处理单元的晶体管数量、晶体管密度、频率和热设计功率的增长呈指数级增长,每16.8至24个月翻一番,但ic的热设计功率(TDP)和频率的增长在2003年之前有所增加。此后,直到今天,TDP和频率的增长几乎是线性的。不同内存的ic以上参数的增长速度稍快,每14 ~ 16个月增长一倍。特征尺寸每18个月缩小2倍。发现特征尺寸与晶体管密度之间存在很强的关系(R2 = 0.9),并且观察到晶体管密度增加2-3倍时特征尺寸减少1倍。从1973年到2019年,ic设计的不同参数与摩尔定律保持同步。在集成电路频率和功率的限制下,集成电路设计中特征尺寸的减小、晶体管数量的增加和晶体管密度的增加将在未来几年遵循摩尔定律。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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