11Gb/s monolithically integrated silicon optical receiver for 850nm wavelength

Abstract

A monolithically integrated optical receiver is realized in a modified silicon 0.5mum BiCMOS process with fT=25 GHz that contains a pin photodiode. At a wavelength of 850nm, a BER of 10-9 , a PRBS of 231-1, the receiver has sensitivities of -10.8dBm, -10.1dBm, and -8.9dBm for data rates of 8Gb/s, 10Gb/s, and 11Gb/s, respectively