{"title":"Correlating PIN-photodetector with novel difference-integrator concept for range-finding applications","authors":"A. Nemecek, K. Oberhauser, H. Zimmermann","doi":"10.1109/ESSCIR.2005.1541667","DOIUrl":null,"url":null,"abstract":"Exploiting the benefits of PIN photodiodes, a correlating detector and a novel difference integrator concept were realized in a single-chip range-finder solution. The PIN photodetector performing already internal modulation has a responsivity of R=0.30A/W at 660nm. A bandwidth of f/sub 3dB/=250MHz with correlation gates on thin oxide, respectively 500MHz on field oxide were achieved. Both challenges of the distance measurement - high sensitivity for signals in the order of nW and accuracies of 1.6% (1.7%) for 10m (15m) - could be reached. The measurement range goes from 20cm to 15m. The chip was realized in a modified 0.6nm BiCMOS process. Effective pixel size is /spl sim/250 /spl times/170/spl mu/m/sup 2/ including the photoreceiver of /spl sim/100 /spl times/ 100 /spl mu/m/sup 2/ resulting in a fill factor of /spl sim/24%.","PeriodicalId":239980,"journal":{"name":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2005.1541667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Exploiting the benefits of PIN photodiodes, a correlating detector and a novel difference integrator concept were realized in a single-chip range-finder solution. The PIN photodetector performing already internal modulation has a responsivity of R=0.30A/W at 660nm. A bandwidth of f/sub 3dB/=250MHz with correlation gates on thin oxide, respectively 500MHz on field oxide were achieved. Both challenges of the distance measurement - high sensitivity for signals in the order of nW and accuracies of 1.6% (1.7%) for 10m (15m) - could be reached. The measurement range goes from 20cm to 15m. The chip was realized in a modified 0.6nm BiCMOS process. Effective pixel size is /spl sim/250 /spl times/170/spl mu/m/sup 2/ including the photoreceiver of /spl sim/100 /spl times/ 100 /spl mu/m/sup 2/ resulting in a fill factor of /spl sim/24%.