Non-volatile memory circuits for FIMS and TAS writing techniques on magnetic tunnelling junctions

Abstract

This paper presents, and compares, two circuits based on Magnetic RAM (MRAM) technology for use as configuration memory elements of coarse grained reconfigurable arrays. MRAM based memory cells provide non-volatility with cell areas and access speeds comparable to those of conventional static memories. Two scaled-down prototypes of a coarse grain reconfigurable array that employs MRAM based elements as configuration memory have been designed, manufactured and tested. One prototype employs Field Induced Magnetic Switching (FIMS) writing technique while the other prototype employs Thermally Assisted Switching (TAS) writing technique. Both prototypes are compared qualitatively and quantitatively and conclusions are drawn.