A fully customized hardware system for ultra-fast feedback-controlled electromigration using FPGA

Yuma Kanamaru, M. Ando, R. Suda, J. Shirakashi
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引用次数: 1

Abstract

Electromigration (EM) method for the fabrication of nanogaps is specifically simple as compared with other methods because it is achieved by only passing a current through a metal nanowire. However, typical EM procedure induces an abrupt break that yields a nanogap with high tunnel resistance. Hence, various approaches have been reported to address this problem, and feedback-controlled electromigration (FCE) scheme has been successfully employed to make nanogaps safely and reliably. On the other hand, the formation of nanogaps by FCE method using a microprocessor-based controller with a general purpose operating system is considerably slow process. In this study, we designed a new system using field programmable gate array (FPGA). Furthermore, we applied this system to Au μm-wires. Consequently, the FCE experiments using FPGA-based control system were performed at 20 μsec of deterministic loop time. In addition, conductance was precisely controlled and adjusted from 10 mS to less than 77.5 μS for within 1 sec, which is 102-3 times shorter than that of conventional FCE procedure using microprocessor-based control system.
一个完全定制的基于FPGA的超快速反馈控制电迁移硬件系统
与其他方法相比,电迁移(EM)制造纳米隙的方法特别简单,因为它只需要通过金属纳米线传递电流即可实现。然而,典型的电磁过程会导致突然断裂,从而产生具有高隧道电阻的纳米隙。因此,各种方法已经被报道来解决这个问题,反馈控制的电迁移(FCE)方案已经成功地用于安全可靠地制造纳米间隙。另一方面,使用基于微处理器的控制器和通用操作系统的FCE方法形成纳米隙的过程相当缓慢。在本研究中,我们使用现场可编程门阵列(FPGA)设计了一个新的系统。此外,我们还将该系统应用于Au μm线。因此,采用基于fpga的控制系统,在20 μsec的确定回路时间下进行了FCE实验。利用微处理器控制系统,在1秒内精确控制电导从10 mS调整到77.5 μS以下,比传统FCE工艺缩短了102 ~ 3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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