Investigation of confining layers effects on optoelectronic performances of transistor laser

Abstract

Effects of confining layers on optoelectronic performances including, optical output, current gain and frequency response of single quantum well transistor laser is investigated. By developing a new continuity equation, effects of drift component in addition to diffusion term, is analyzed. Simulation results show that by using graded index (GRIN) layers of AlξGa1−ξAs (ξ: 0.05➔0 in SCH1 and ξ: 0➔0.02 in SCH2) instead of GaAs in Separate Confinement Heterostructure (SCH), optical output power increases 37% and −3dB bandwidth increases to 21 GHz compared with 19 GHz in original structure.