T. Bandi, J. Baborowski, A. Dommann, H. Shea, F. Cardot, A. Neels
{"title":"Evaluation of silicon tuning-fork resonators under space-relevant radiation conditions","authors":"T. Bandi, J. Baborowski, A. Dommann, H. Shea, F. Cardot, A. Neels","doi":"10.1117/12.2044209","DOIUrl":null,"url":null,"abstract":"This work reports on irradiations made on silicon bulk-acoustic wave resonators. The resonators were based on a tuning fork geometry and actuated by a piezoelectric aluminum nitride layer. They had a resonance frequency of 150 kHz and a quality factor of about 20000 under vacuum. The susceptibility of the devices to radiation induced degradation was investigated using 60Co γ-rays and 50 MeV protons with space-relevant doses of up to 170 krad. The performance of the devices after irradiation indicated a high tolerance to both ionizing damage and displacement damage effects. The results support the efforts towards design and fabrication of highly reliable MEMS devices for space applications.","PeriodicalId":395835,"journal":{"name":"Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2044209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This work reports on irradiations made on silicon bulk-acoustic wave resonators. The resonators were based on a tuning fork geometry and actuated by a piezoelectric aluminum nitride layer. They had a resonance frequency of 150 kHz and a quality factor of about 20000 under vacuum. The susceptibility of the devices to radiation induced degradation was investigated using 60Co γ-rays and 50 MeV protons with space-relevant doses of up to 170 krad. The performance of the devices after irradiation indicated a high tolerance to both ionizing damage and displacement damage effects. The results support the efforts towards design and fabrication of highly reliable MEMS devices for space applications.