A novel sense amplifier for flexible voltage operation NAND flash memories

H. Nakamura, J. Miyamoto, K. Imamiya, Y. Iwata
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引用次数: 8

Abstract

This paper proposes a new bit-by-bit verify circuit for application in NAND flash memories. The Sense Amplifier (S/A) employed confers two benefits: flexible power supply voltage (ex. 3 V or 5 V) operation with a high noise immunity and an intelligent page copy function. The benefits are very useful to the flash memory card or system and accelerate the replacement of magnetic memories by flash memories. The S/A has been successfully implemented in the commercial version of the 32 Mbit NAND-EEPROM, in which the S/A is newly introduced in comparison with the prototype version.
一种用于柔性电压操作NAND闪存的新型感测放大器
本文提出了一种新的用于NAND闪存的逐位校验电路。采用的感测放大器(S/A)具有两个优点:灵活的电源电压(例如3 V或5 V)操作,具有高抗噪性和智能页面复制功能。好处是非常有用的闪存卡或系统,并加速取代磁性存储器的闪存。S/A已经在32mbit NAND-EEPROM的商业版本中成功实现,其中与原型版本相比,S/A是新引入的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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