Exploring the Influence of Channel and Contact Resistance Variability in Graphene Field Effect Transistor

Abstract

The quality of contacts between 2D material and metal significantly affects the performance of devices based on 2D material. Therefore, we present an article that investigates the contact and channel resistance of graphene field-effect transistors. It is interesting to observe that channel and contact resistance efficiently affects the total resistance of graphene-based devices. In addition to the total resistance of the device, the channel and contact resistance are effectively influenced by applied bias. The source-drain resistance, the contact resistance inherently depends on the resistance of the graphene channel. We present a useful model for determining the channel resistance of a device. Our model explains, how the Gaussian peak values are same for the same contact resistances when RS <1000, which is a very characteristic study result. In addition, our model shows a multiplicity effect at high source resistance and low top gate voltage.