Adaptive Neural Network Model for SOI-MOSFET I-V Characteristic Including Self-Heating Effect

Abstract

In this paper, a model for SOI MOSFETs which considers the self-heating effect is proposed. The model which is based on a multi layer perceptron (MLP) neural network, generates the drain current as a function of the gate-source voltage, drain-source voltage, and the device temperature. Based on the current, the temperature of the device channel is calculated. The neural network adapts itself with the channel temperature which can be calculated by an equivalent thermal model for the SOI device.