4-terminal Angelov model for SOI CMOS MESFETs

Abstract

This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.