Characterization of silicon direct bonding methodology for high performance IGBT

Abstract

Silicon direct bonding methods for 1200 V IGBTs are introduced and their effects on the device characteristics are discussed. Device characteristics of SDB IGBTs are mainly determined by the ion implantation, oxide etching and cleaning conditions. A 1200 V punchthrough (PT) IGBT fabricated using this bonding methodology exhibits V/sub ce,sat/ of 2.5 V, E/sub off/ of 30 uJ/A and short-circuit withstanding time of 50 /spl mu/s.