High speed lateral-IGBT with a passive gate

Abstract

A lateral-IGBT with a passive gate on collector portion has been proposed. Since the collector voltage directly drives the passive gate which controls the parasitic PNPTr, high-speed turn-off is compatible with low on-resistance without a side effect such as snapback I-V characteristics. Simulation results have shown drastic drop of fall time from 120ns to 5ns. Fabricated device have realize 6.8 ohm/mm/sup 2/ @ Kc=2V specific on-resistance, 780V blocking capability and improved turn-off characteristics similar to simulation results.