EMC immunity of integrated smart power transistors in a non-50Ω environment

Hermann Nzalli, W. Wilkening, R. Jansen
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引用次数: 1

Abstract

The Direct Power Injection (DPI) standard, widely used for the susceptibility analysis of integrated circuits (IC), specifies an ideal 50Ω-environment for the investigations. This constant load assumption does not fully cover latter stages or the IC final operating environment, where ICs are subjected to various load impedances, especially at pins which are connected to wiring harnesses. We present variable-load DPI measurements and large-signal simulations for new circuit blocks, namely a simplified high-side driver and an ESD structure. The results extend the applicability of small-signal simplification methods beyond a low-side driver formerly reported by the same authors.
non-50Ω环境下集成智能功率晶体管的抗EMC性能
直接功率注入(DPI)标准,广泛用于集成电路(IC)的敏感性分析,为研究指定了一个理想的50Ω-environment。这种恒定负载假设并不能完全涵盖后期阶段或IC的最终工作环境,其中IC受到各种负载阻抗的影响,特别是在连接到线束的引脚处。我们提出了可变负载DPI测量和大信号模拟的新电路模块,即一个简化的高侧驱动器和ESD结构。结果扩展了小信号简化方法的适用性,超出了以前由同一作者报道的低侧驱动器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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